NVMFS5C612NLWFT1G Datasheet

Datasheet	NVMFS5C612NLWFT1G
File Size	129.83 KB
Total Pages	6
Manufacturer	ON Semiconductor
Website	http://www.onsemi.com/
Total Parts	This datasheet covers 8 part numbers
Associated Parts	NVMFS5C612NLWFT1G, NVMFS5C612NLT1G, NVMFS5C612NLWFT3G, NVMFS5C612NLT3G, NVMFS5C612NLWFAFT1G, NVMFS5C612NLWFAFT3G, NVMFS5C612NLAFT3G, NVMFS5C612NLAFT1G
Description	MOSFET N-CH 60V 36A SO8FL, MOSFET N-CH 60V 36A SO8FL, MOSFET N-CH 60V 36A SO8FL, MOSFET N-CH 60V 36A SO8FL, MOSFET N-CH 60V 38A 250A 5DFN

NVMFS5C612NLWFT1G - ON Semiconductor

The Products You May Be Interested In

NVMFS5C612NLWFT1G	ON Semiconductor	MOSFET N-CH 60V 36A SO8FL	113 More on Order
NVMFS5C612NLT1G	ON Semiconductor	MOSFET N-CH 60V 36A SO8FL	144 More on Order
NVMFS5C612NLWFT3G	ON Semiconductor	MOSFET N-CH 60V 36A SO8FL	372 More on Order
NVMFS5C612NLT3G	ON Semiconductor	MOSFET N-CH 60V 36A SO8FL	446 More on Order
NVMFS5C612NLWFAFT1G	ON Semiconductor	MOSFET N-CH 60V 38A 250A 5DFN	263 More on Order
NVMFS5C612NLWFAFT3G	ON Semiconductor	MOSFET N-CH 60V 38A 250A 5DFN	113 More on Order
NVMFS5C612NLAFT3G	ON Semiconductor	MOSFET N-CH 60V 38A 250A 5DFN	407 More on Order
NVMFS5C612NLAFT1G	ON Semiconductor	MOSFET N-CH 60V 38A 250A 5DFN	250 More on Order

URL Link

www.oemstron.com/datasheet/NVMFS5C612NLWFT1G

ON Semiconductor

NVMFS5C612NLWFT1G

Manufacturer

ON Semiconductor

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

ON Semiconductor

NVMFS5C612NLT1G

Manufacturer

ON Semiconductor

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

ON Semiconductor

NVMFS5C612NLWFT3G

Manufacturer

ON Semiconductor

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

ON Semiconductor

NVMFS5C612NLT3G

Manufacturer

ON Semiconductor

Series

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

ON Semiconductor

NVMFS5C612NLWFAFT1G

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 250A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.36mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

ON Semiconductor

NVMFS5C612NLWFAFT3G

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 250A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.36mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

ON Semiconductor

NVMFS5C612NLAFT3G

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 250A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.36mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

ON Semiconductor

NVMFS5C612NLAFT1G

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 250A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.36mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads