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NVATS4A101PZT4G Datasheet

NVATS4A101PZT4G Cover
DatasheetNVATS4A101PZT4G
File Size439.26 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NVATS4A101PZT4G
Description MOSFET P-CHANNEL 30V 27A ATPAK

NVATS4A101PZT4G - ON Semiconductor

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URL Link

NVATS4A101PZT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

18.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

875pF @ 10V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63