Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

NTR4503NT3G Datasheet

NTR4503NT3G Cover
DatasheetNTR4503NT3G
File Size121.6 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts NTR4503NT3G, NTR4503NT3, NTR4503NT1, NVTR4503NT1G, NTR4503NT1G
Description MOSFET N-CH 30V 1.5A SOT-23, MOSFET N-CH 30V 1.5A SOT-23, MOSFET N-CH 30V 1.5A SOT-23, MOSFET N-CH 30V 1.5A SOT23, MOSFET N-CH 30V 1.5A SOT-23

NTR4503NT3G - ON Semiconductor

NTR4503NT3G Datasheet Page 1
NTR4503NT3G Datasheet Page 2
NTR4503NT3G Datasheet Page 3
NTR4503NT3G Datasheet Page 4
NTR4503NT3G Datasheet Page 5
NTR4503NT3G Datasheet Page 6

The Products You May Be Interested In

NTR4503NT3G NTR4503NT3G ON Semiconductor MOSFET N-CH 30V 1.5A SOT-23 336

More on Order

NTR4503NT3 NTR4503NT3 ON Semiconductor MOSFET N-CH 30V 1.5A SOT-23 469

More on Order

NTR4503NT1 NTR4503NT1 ON Semiconductor MOSFET N-CH 30V 1.5A SOT-23 212

More on Order

NVTR4503NT1G NVTR4503NT1G ON Semiconductor MOSFET N-CH 30V 1.5A SOT23 3992

More on Order

NTR4503NT1G NTR4503NT1G ON Semiconductor MOSFET N-CH 30V 1.5A SOT-23 14641

More on Order

URL Link

NTR4503NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 24V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

NTR4503NT3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 24V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

NTR4503NT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 24V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

NVTR4503NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 15V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

NTR4503NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 24V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3