Semiconductors
Passive Components
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Optoelectronics
| Datasheet | NTR4171PT3G |
| File Size | 121.95 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTR4171PT3G, NTR4171PT1G |
| Description | MOSFET P-CH 30V 2.2A SOT23-3, MOSFET P-CH 30V 2.2A SOT23 |
NTR4171PT3G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 75mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V FET Feature - Power Dissipation (Max) 480mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 75mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V FET Feature - Power Dissipation (Max) 480mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |