Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTR2101PT1 |
| File Size | 125.91 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTR2101PT1, NTR2101PT1G |
| Description | MOSFET P-CH 8V 3.7A SOT-23, MOSFET P-CH 8V 3.7A SOT-23 |
NTR2101PT1 - ON Semiconductor
The Products You May Be Interested In
 |
NTR2101PT1 | ON Semiconductor | MOSFET P-CH 8V 3.7A SOT-23 | 107 More on Order |
 |
NTR2101PT1G | ON Semiconductor | MOSFET P-CH 8V 3.7A SOT-23 | 119556 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 52mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1173pF @ 4V FET Feature - Power Dissipation (Max) 960mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 52mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1173pF @ 4V FET Feature - Power Dissipation (Max) 960mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |