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Datasheet | NTMFS6H836NT1G |
File Size | 134.43 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | NTMFS6H836NT1G |
Description | T8 80V SO8FL |
NTMFS6H836NT1G - ON Semiconductor
![NTMFS6H836NT1G Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs6h836nt1g-0001.jpg)
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![NTMFS6H836NT1G Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs6h836nt1g-0004.jpg)
![NTMFS6H836NT1G Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs6h836nt1g-0005.jpg)
![NTMFS6H836NT1G Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs6h836nt1g-0006.jpg)
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NTMFS6H836NT1G | ON Semiconductor | T8 80V SO8FL | 319 More on Order |
URL Link
www.oemstron.com/datasheet/NTMFS6H836NT1G
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 40V FET Feature - Power Dissipation (Max) 3.7W (Ta), 89W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |