Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

NTMFS5C645NLT1G Datasheet

NTMFS5C645NLT1G Cover
DatasheetNTMFS5C645NLT1G
File Size118.54 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTMFS5C645NLT1G, NTMFS5C645NLT3G
Description MOSFET N-CH 60V 22A 100A 5DFN, MOSFET N-CH 60V 22A 100A 5DFN

NTMFS5C645NLT1G - ON Semiconductor

NTMFS5C645NLT1G Datasheet Page 1
NTMFS5C645NLT1G Datasheet Page 2
NTMFS5C645NLT1G Datasheet Page 3
NTMFS5C645NLT1G Datasheet Page 4
NTMFS5C645NLT1G Datasheet Page 5
NTMFS5C645NLT1G Datasheet Page 6
NTMFS5C645NLT1G Datasheet Page 7

The Products You May Be Interested In

NTMFS5C645NLT1G NTMFS5C645NLT1G ON Semiconductor MOSFET N-CH 60V 22A 100A 5DFN 392

More on Order

NTMFS5C645NLT3G NTMFS5C645NLT3G ON Semiconductor MOSFET N-CH 60V 22A 100A 5DFN 271

More on Order

URL Link

NTMFS5C645NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

NTMFS5C645NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads