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NTLJS4159NT1G Datasheet

NTLJS4159NT1G Cover
DatasheetNTLJS4159NT1G
File Size142.64 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTLJS4159NT1G
Description MOSFET N-CH 30V 3.6A 6DFN

NTLJS4159NT1G - ON Semiconductor

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NTLJS4159NT1G NTLJS4159NT1G ON Semiconductor MOSFET N-CH 30V 3.6A 6DFN 236

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URL Link

NTLJS4159NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

35mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1045pF @ 15V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad