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NTJS4160NT1G Datasheet

NTJS4160NT1G Cover
DatasheetNTJS4160NT1G
File Size81.73 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTJS4160NT1G
Description MOSFET N-CH 30V 1.8A SC88-6

NTJS4160NT1G - ON Semiconductor

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NTJS4160NT1G NTJS4160NT1G ON Semiconductor MOSFET N-CH 30V 1.8A SC88-6 185

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URL Link

NTJS4160NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.75nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 10V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88/SC70-6/SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363