Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTJS3151PT2 |
| File Size | 123.89 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | NTJS3151PT2, NTJS3151PT2G, NTJS3151PT1G |
| Description | MOSFET P-CH 12V 2.7A SOT-363, MOSFET P-CH 12V 2.7A SOT-363, MOSFET P-CH 12V 2.7A SOT-363 |
NTJS3151PT2 - ON Semiconductor
The Products You May Be Interested In
 |
NTJS3151PT2 | ON Semiconductor | MOSFET P-CH 12V 2.7A SOT-363 | 394 More on Order |
 |
NTJS3151PT2G | ON Semiconductor | MOSFET P-CH 12V 2.7A SOT-363 | 375 More on Order |
 |
NTJS3151PT1G | ON Semiconductor | MOSFET P-CH 12V 2.7A SOT-363 | 97346 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id 400mV @ 100µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 12V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88/SC70-6/SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id 400mV @ 100µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 12V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88/SC70-6/SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 12V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88/SC70-6/SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |