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| Datasheet | NTHS2101PT1G |
| File Size | 54.73 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTHS2101PT1G, NTHS2101PT1 |
| Description | MOSFET P-CH 8V 5.4A CHIPFET, MOSFET P-CH 8V 5.4A CHIPFET |
NTHS2101PT1G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5.4A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature - Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5.4A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature - Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |