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NTD3817NT4G Datasheet

NTD3817NT4G Cover
DatasheetNTD3817NT4G
File Size94.43 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts NTD3817NT4G, NTD3817N-35G, NTD3817N-1G
Description MOSFET N-CH 16V 7.6A DPAK, MOSFET N-CH 16V 7.6A IPAK, MOSFET N-CH 16V 7.6A IPAK

NTD3817NT4G - ON Semiconductor

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URL Link

NTD3817NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16V

Current - Continuous Drain (Id) @ 25°C

7.6A (Ta), 34.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

702pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 25.9W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTD3817N-35G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16V

Current - Continuous Drain (Id) @ 25°C

7.6A (Ta), 34.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

702pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 25.9W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak

NTD3817N-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16V

Current - Continuous Drain (Id) @ 25°C

7.6A (Ta), 34.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

702pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 25.9W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA