Semiconductors
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| Datasheet | NSBA123TDP6T5G |
| File Size | 119.03 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NSBA123TDP6T5G |
| Description | TRANS 2PNP PREBIAS 0.408W SOT963 |
NSBA123TDP6T5G - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/NSBA123TDP6T5G
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Manufacturer ON Semiconductor Series - Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 408mW Mounting Type Surface Mount Package / Case SOT-963 Supplier Device Package SOT-963 |