Semiconductors
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| Datasheet | NRVBM2H100T3G |
| File Size | 102.82 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NRVBM2H100T3G, MBRM2H100T3G |
| Description | DIODE SCHOTTKY 100V 2A POWERMITE, DIODE SCHOTTKY 100V 2A POWERMITE |
NRVBM2H100T3G - ON Semiconductor
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Manufacturer ON Semiconductor Series POWERMITE® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 680mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20µA @ 100V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 840mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20µA @ 100V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -65°C ~ 175°C |