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NRVBM110ET1G Datasheet

NRVBM110ET1G Cover
DatasheetNRVBM110ET1G
File Size164.43 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NRVBM110ET1G
Description DIODE SCHOTTKY 10V 1A POWERMITE

NRVBM110ET1G - ON Semiconductor

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URL Link

NRVBM110ET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

POWERMITE®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

10V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

595mV @ 2A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1µA @ 10V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

DO-216AA

Supplier Device Package

Powermite

Operating Temperature - Junction

-55°C ~ 150°C