Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

NP88N04NUG-S18-AY Datasheet

NP88N04NUG-S18-AY Cover
DatasheetNP88N04NUG-S18-AY
File Size254.76 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP88N04NUG-S18-AY
Description MOSFET N-CH 40V 88A TO-262

NP88N04NUG-S18-AY - Renesas Electronics America

NP88N04NUG-S18-AY Datasheet Page 1
NP88N04NUG-S18-AY Datasheet Page 2
NP88N04NUG-S18-AY Datasheet Page 3
NP88N04NUG-S18-AY Datasheet Page 4
NP88N04NUG-S18-AY Datasheet Page 5
NP88N04NUG-S18-AY Datasheet Page 6
NP88N04NUG-S18-AY Datasheet Page 7
NP88N04NUG-S18-AY Datasheet Page 8
NP88N04NUG-S18-AY Datasheet Page 9

The Products You May Be Interested In

NP88N04NUG-S18-AY NP88N04NUG-S18-AY Renesas Electronics America MOSFET N-CH 40V 88A TO-262 419

More on Order

URL Link

NP88N04NUG-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 44A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 200W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA