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NP60N055NUK-S18-AY Datasheet

NP60N055NUK-S18-AY Cover
DatasheetNP60N055NUK-S18-AY
File Size260.63 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts NP60N055NUK-S18-AY, NP60N055MUK-S18-AY
Description MOSFET N-CH 55V 60A TO-220, MOSFET N-CH 55V 60A TO-220

NP60N055NUK-S18-AY - Renesas Electronics America

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URL Link

NP60N055NUK-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Full Pack, I²Pak

NP60N055MUK-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3