Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

NP60N04MUG-S18-AY Datasheet

NP60N04MUG-S18-AY Cover
DatasheetNP60N04MUG-S18-AY
File Size316.72 KB
Total Pages10
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP60N04MUG-S18-AY
Description MOSFET N-CH 40V 60A TO-220

NP60N04MUG-S18-AY - Renesas Electronics America

NP60N04MUG-S18-AY Datasheet Page 1
NP60N04MUG-S18-AY Datasheet Page 2
NP60N04MUG-S18-AY Datasheet Page 3
NP60N04MUG-S18-AY Datasheet Page 4
NP60N04MUG-S18-AY Datasheet Page 5
NP60N04MUG-S18-AY Datasheet Page 6
NP60N04MUG-S18-AY Datasheet Page 7
NP60N04MUG-S18-AY Datasheet Page 8
NP60N04MUG-S18-AY Datasheet Page 9
NP60N04MUG-S18-AY Datasheet Page 10

The Products You May Be Interested In

NP60N04MUG-S18-AY NP60N04MUG-S18-AY Renesas Electronics America MOSFET N-CH 40V 60A TO-220 239

More on Order

URL Link

NP60N04MUG-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 88W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3