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| Datasheet | NP33N06YDG-E1-AY |
| File Size | 223.42 KB |
| Total Pages | 8 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NP33N06YDG-E1-AY |
| Description | MOSFET N-CH 60V 33A 8HSON |
NP33N06YDG-E1-AY - Renesas Electronics America
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URL Link
www.oemstron.com/datasheet/NP33N06YDG-E1-AY
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 14mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta), 97W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSON Package / Case 8-SMD, Flat Lead Exposed Pad |