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NP15P06SLG-E1-AY Datasheet

NP15P06SLG-E1-AY Cover
DatasheetNP15P06SLG-E1-AY
File Size299.48 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP15P06SLG-E1-AY
Description MOSFET P-CH 60V 15A TO-252

NP15P06SLG-E1-AY - Renesas Electronics America

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URL Link

NP15P06SLG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 30W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (MP-3ZK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63