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NLAS4717EPFCT1G Datasheet

NLAS4717EPFCT1G Cover
DatasheetNLAS4717EPFCT1G
File Size133.27 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NLAS4717EPFCT1G, NLAS4717EPMTR2G
Description IC SWITCH DUAL SPDT 10MICROBUMP, IC SWITCH DUAL SPDT 10WQFN

NLAS4717EPFCT1G - ON Semiconductor

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URL Link

NLAS4717EPFCT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

2

On-State Resistance (Max)

3.5Ohm

Channel-to-Channel Matching (ΔRon)

100mOhm

Voltage - Supply, Single (V+)

1.8V ~ 5.5V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

30ns, 40ns

-3db Bandwidth

90MHz

Charge Injection

9pC

Channel Capacitance (CS(off), CD(off))

15pF

Current - Leakage (IS(off)) (Max)

1nA

Crosstalk

-110dB @ 1MHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

10-UFBGA, FCBGA

Supplier Device Package

10-Microbump (1.97x1.47)

NLAS4717EPMTR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

2

On-State Resistance (Max)

3.5Ohm

Channel-to-Channel Matching (ΔRon)

100mOhm

Voltage - Supply, Single (V+)

1.8V ~ 5.5V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

30ns, 40ns

-3db Bandwidth

90MHz

Charge Injection

9pC

Channel Capacitance (CS(off), CD(off))

15pF

Current - Leakage (IS(off)) (Max)

1nA

Crosstalk

-110dB @ 1MHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

10-WFQFN

Supplier Device Package

10-WQFN (1.4x1.8)