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| Datasheet | NDDL01N60Z-1G |
| File Size | 124.23 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NDDL01N60Z-1G, NDTL01N60ZT1G, NDDL01N60ZT4G, NDTL01N60ZT3G |
| Description | MOSFET N-CH 600V 0.8A IPAK, MOSFET N-CH 600V 0.25A SOT223-4, MOSFET N-CH 600V 0.8A DPAK, MOSFET N-CH 600V 0.25A SOT223-4 |
NDDL01N60Z-1G - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 92pF @ 25V FET Feature - Power Dissipation (Max) 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 92pF @ 25V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 (TO-261) Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 92pF @ 25V FET Feature - Power Dissipation (Max) 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 92pF @ 25V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 (TO-261) Package / Case TO-261-4, TO-261AA |