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| Datasheet | NAND04GR3B2DN6E |
| File Size | 1,957.35 KB |
| Total Pages | 72 |
| Manufacturer | Micron Technology Inc. |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NAND04GR3B2DN6E |
| Description | IC FLASH 4G PARALLEL 48TSOP |
NAND04GR3B2DN6E - Micron Technology Inc.
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NAND04GR3B2DN6E | Micron Technology Inc. | IC FLASH 4G PARALLEL 48TSOP | 283 More on Order |
URL Link
www.oemstron.com/datasheet/NAND04GR3B2DN6E
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Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 4Gb (512M x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP |