Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MURTA20060R |
| File Size | 845.94 KB |
| Total Pages | 4 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | MURTA20060R, MURTA20060, MURTA200120R, MURTA200120 |
| Description | DIODE GEN PURP 600V 100A 3 TOWER, DIODE GEN PURP 600V 100A 3 TOWER, DIODE GEN 1.2KV 100A 3 TOWER, DIODE GEN 1.2KV 100A 3 TOWER |
MURTA20060R - GeneSiC Semiconductor
The Products You May Be Interested In
 |
MURTA20060R | GeneSiC Semiconductor | DIODE GEN PURP 600V 100A 3 TOWER | 358 More on Order |
 |
MURTA20060 | GeneSiC Semiconductor | DIODE GEN PURP 600V 100A 3 TOWER | 154 More on Order |
 |
MURTA200120R | GeneSiC Semiconductor | DIODE GEN 1.2KV 100A 3 TOWER | 419 More on Order |
 |
MURTA200120 | GeneSiC Semiconductor | DIODE GEN 1.2KV 100A 3 TOWER | 185 More on Order |
URL Link
|
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 100A Voltage - Forward (Vf) (Max) @ If 1.7V @ 100A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25µA @ 600V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 100A Voltage - Forward (Vf) (Max) @ If 1.7V @ 100A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25µA @ 600V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 100A Voltage - Forward (Vf) (Max) @ If 2.6V @ 100A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25µA @ 1200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 100A Voltage - Forward (Vf) (Max) @ If 2.6V @ 100A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25µA @ 1200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |