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MPSH10RLRPG Datasheet

MPSH10RLRPG Cover
DatasheetMPSH10RLRPG
File Size82.51 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts MPSH10RLRPG, MPSH10G, MPSH10RLRAG, MPSH10RLRA
Description RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ TO92-3

MPSH10RLRPG - ON Semiconductor

MPSH10RLRPG Datasheet Page 1
MPSH10RLRPG Datasheet Page 2
MPSH10RLRPG Datasheet Page 3

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URL Link

MPSH10RLRPG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSH10G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

MPSH10RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSH10RLRA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3