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MPSA13_D75Z Datasheet

MPSA13_D75Z Cover
DatasheetMPSA13_D75Z
File Size154.35 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts MPSA13_D75Z, MPSA13_D74Z, MPSA13_D27Z, MPSA13_D26Z, MPSA13RA
Description TRANS NPN DARL 30V 1.2A TO-92, TRANS NPN DARL 30V 1.2A TO-92, TRANS NPN DARL 30V 1.2A TO-92, TRANS NPN DARL 30V 1.2A TO-92, TRANS NPN DARL 30V 1.2A TO-92

MPSA13_D75Z - ON Semiconductor

MPSA13_D75Z Datasheet Page 1
MPSA13_D75Z Datasheet Page 2
MPSA13_D75Z Datasheet Page 3
MPSA13_D75Z Datasheet Page 4
MPSA13_D75Z Datasheet Page 5

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MPSA13_D75Z MPSA13_D75Z ON Semiconductor TRANS NPN DARL 30V 1.2A TO-92 404

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MPSA13_D74Z MPSA13_D74Z ON Semiconductor TRANS NPN DARL 30V 1.2A TO-92 316

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MPSA13_D27Z MPSA13_D27Z ON Semiconductor TRANS NPN DARL 30V 1.2A TO-92 246

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MPSA13_D26Z MPSA13_D26Z ON Semiconductor TRANS NPN DARL 30V 1.2A TO-92 228

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MPSA13RA MPSA13RA ON Semiconductor TRANS NPN DARL 30V 1.2A TO-92 123

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URL Link

MPSA13_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

125MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSA13_D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

125MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSA13_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

125MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSA13_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

125MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSA13RA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

125MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3