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MCH6336-TL-E Datasheet

MCH6336-TL-E Cover
DatasheetMCH6336-TL-E
File Size553.08 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts MCH6336-TL-E, MCH6336-TL-H, MCH6336-TL-W
Description PCH 1.8V DRIVE SERIES, MOSFET P-CH 12V 5A MCPH6, MOSFET P-CH 12V 5A MCPH6

MCH6336-TL-E - ON Semiconductor

MCH6336-TL-E Datasheet Page 1
MCH6336-TL-E Datasheet Page 2
MCH6336-TL-E Datasheet Page 3
MCH6336-TL-E Datasheet Page 4
MCH6336-TL-E Datasheet Page 5

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MCH6336-TL-H MCH6336-TL-H ON Semiconductor MOSFET P-CH 12V 5A MCPH6 245

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MCH6336-TL-W MCH6336-TL-W ON Semiconductor MOSFET P-CH 12V 5A MCPH6 296

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URL Link

MCH6336-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

43mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88FL/MCPH6

Package / Case

6-SMD, Flat Leads

MCH6336-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

43mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MCPH

Package / Case

6-SMD, Flat Leads

MCH6336-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

43mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88FL/MCPH6

Package / Case

6-SMD, Flat Leads