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MBR60080CTR Datasheet

MBR60080CTR Cover
DatasheetMBR60080CTR
File Size716.87 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR60080CTR, MBR60080CT, MBR60060CTR, MBR60060CT, MBR60045CTR, MBR60045CT, MBR600100CTR, MBR600100CT
Description DIODE MODULE 80V 300A 2TOWER, DIODE MODULE 80V 300A 2TOWER, DIODE MODULE 60V 300A 2TOWER, DIODE MODULE 60V 300A 2TOWER, DIODE MODULE 45V 300A 2TOWER

MBR60080CTR - GeneSiC Semiconductor

MBR60080CTR Datasheet Page 1
MBR60080CTR Datasheet Page 2
MBR60080CTR Datasheet Page 3

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URL Link

MBR60080CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR60080CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR60060CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

800mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR60060CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

800mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-50°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR60045CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

750mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR60045CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

750mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR600100CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR600100CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower