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MBR50080CTR Datasheet

MBR50080CTR Cover
DatasheetMBR50080CTR
File Size687.5 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR50080CTR, MBR50080CT, MBR50060CTR, MBR50060CT, MBR50045CTR, MBR500100CTR, MBR500100CT, MBR50045CT
Description DIODE MODULE 80V 500A 2TOWER, DIODE MODULE 80V 500A 2TOWER, DIODE MODULE 600V 500A 2TOWER, DIODE MODULE 600V 500A 2TOWER, DIODE MODULE 45V 500A 2TOWER

MBR50080CTR - GeneSiC Semiconductor

MBR50080CTR Datasheet Page 1
MBR50080CTR Datasheet Page 2
MBR50080CTR Datasheet Page 3

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URL Link

MBR50080CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50080CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50060CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50060CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50045CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR500100CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR500100CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50045CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower