Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MBR300200CTR |
| File Size | 697.46 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | MBR300200CTR, MBR300200CT, MBR300150CTR, MBR300150CT |
| Description | DIODE SCHOTTKY 200V 150A 2 TOWER, DIODE SCHOTTKY 200V 150A 2 TOWER, DIODE SCHOTTKY 150V 150A 2 TOWER, DIODE SCHOTTKY 150V 150A 2 TOWER |
MBR300200CTR - GeneSiC Semiconductor
The Products You May Be Interested In
 |
MBR300200CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 150A 2 TOWER | 297 More on Order |
|
MBR300200CT | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 150A 2 TOWER | 335 More on Order |
|
MBR300150CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 150A 2 TOWER | 272 More on Order |
|
MBR300150CT | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 150A 2 TOWER | 434 More on Order |
URL Link
|
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 150A Voltage - Forward (Vf) (Max) @ If 920mV @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 200V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 150A Voltage - Forward (Vf) (Max) @ If 920mV @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 200V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) (per Diode) 150A Voltage - Forward (Vf) (Max) @ If 880mV @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 150V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) (per Diode) 150A Voltage - Forward (Vf) (Max) @ If 880mV @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 150V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |