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| Datasheet | MB85RE4M2TFN-G-ASE1 |
| File Size | 603.73 KB |
| Total Pages | 20 |
| Manufacturer | Fujitsu Electronics |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | MB85RE4M2TFN-G-ASE1 |
| Description | IC FRAM 4M PARALLEL 44TSOP |
MB85RE4M2TFN-G-ASE1 - Fujitsu Electronics
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MB85RE4M2TFN-G-ASE1 | Fujitsu Electronics | IC FRAM 4M PARALLEL 44TSOP | 421 More on Order |
URL Link
www.oemstron.com/datasheet/MB85RE4M2TFN-G-ASE1
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Manufacturer Fujitsu Electronics America, Inc. Series - Memory Type Non-Volatile Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 4Mb (256K x 16) Memory Interface - Clock Frequency - Write Cycle Time - Word, Page 150ns Access Time - Voltage - Supply 1.8V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP |