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IXTX210P10T Datasheet

IXTX210P10T Cover
DatasheetIXTX210P10T
File Size179.96 KB
Total Pages6
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTX210P10T
Description MOSFET P-CH 100V 210A PLUS247

IXTX210P10T - IXYS

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IXTX210P10T IXTX210P10T IXYS MOSFET P-CH 100V 210A PLUS247 125

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URL Link

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 105A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

740nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

69500pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3