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IXTV200N10TS Datasheet

IXTV200N10TS Cover
DatasheetIXTV200N10TS
File Size215 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTV200N10TS, IXTV200N10T
Description MOSFET N-CH 100V 200A PLUS220SMD, MOSFET N-CH 100V 200A PLUS220

IXTV200N10TS - IXYS

IXTV200N10TS Datasheet Page 1
IXTV200N10TS Datasheet Page 2
IXTV200N10TS Datasheet Page 3
IXTV200N10TS Datasheet Page 4
IXTV200N10TS Datasheet Page 5

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URL Link

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

550W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PLUS-220SMD

Package / Case

PLUS-220SMD

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

550W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab