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IXTV102N20T Datasheet

IXTV102N20T Cover
DatasheetIXTV102N20T
File Size178.16 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTV102N20T
Description MOSFET N-CH 200V 102A PLUS220

IXTV102N20T - IXYS

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IXTV102N20T IXTV102N20T IXYS MOSFET N-CH 200V 102A PLUS220 194

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URL Link

Manufacturer

IXYS

Series

TrenchHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

FET Feature

-

Power Dissipation (Max)

750W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab