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IXTT20N50D Datasheet

IXTT20N50D Cover
DatasheetIXTT20N50D
File Size157.4 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTT20N50D, IXTH20N50D
Description MOSFET N-CH 500V 20A TO-268, MOSFET N-CH 500V 20A TO-247

IXTT20N50D - IXYS

IXTT20N50D Datasheet Page 1
IXTT20N50D Datasheet Page 2
IXTT20N50D Datasheet Page 3
IXTT20N50D Datasheet Page 4
IXTT20N50D Datasheet Page 5

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IXTT20N50D IXTT20N50D IXYS MOSFET N-CH 500V 20A TO-268 328

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IXTH20N50D IXTH20N50D IXYS MOSFET N-CH 500V 20A TO-247 328

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URL Link

IXTT20N50D

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXTH20N50D

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3