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IXTT1N450HV Datasheet

IXTT1N450HV Cover
DatasheetIXTT1N450HV
File Size206.74 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTT1N450HV, IXTH1N450HV
Description MOSFET N-CH 4500V 1A TO268, 2500V TO 4500V VERY HI VOLT PWR

IXTT1N450HV - IXYS

IXTT1N450HV Datasheet Page 1
IXTT1N450HV Datasheet Page 2
IXTT1N450HV Datasheet Page 3
IXTT1N450HV Datasheet Page 4
IXTT1N450HV Datasheet Page 5

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

4500V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

85Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1730pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

4500V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247HV

Package / Case

TO-247-3 Variant