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IXTR16P60P Datasheet

IXTR16P60P Cover
DatasheetIXTR16P60P
File Size124.14 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTR16P60P
Description MOSFET P-CH 600V 10A ISOPLUS247

IXTR16P60P - IXYS

IXTR16P60P Datasheet Page 1
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IXTR16P60P IXTR16P60P IXYS MOSFET P-CH 600V 10A ISOPLUS247 454

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URL Link

IXTR16P60P

IXYS

Manufacturer

IXYS

Series

PolarP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

790mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5120pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™