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IXTQ36N30P Datasheet

IXTQ36N30P Cover
DatasheetIXTQ36N30P
File Size252.12 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXTQ36N30P, IXTP36N30P, IXTA36N30P
Description MOSFET N-CH 300V 36A TO-3P, MOSFET N-CH 300V 36A TO-220, MOSFET N-CH 300V 36A TO-263

IXTQ36N30P - IXYS

IXTQ36N30P Datasheet Page 1
IXTQ36N30P Datasheet Page 2
IXTQ36N30P Datasheet Page 3
IXTQ36N30P Datasheet Page 4
IXTQ36N30P Datasheet Page 5

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URL Link

IXTQ36N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

IXTP36N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IXTA36N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB