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| Datasheet | IXTP12N65X2M |
| File Size | 183.62 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTP12N65X2M |
| Description | MOSFET N-CH TO-220 |
IXTP12N65X2M - IXYS
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IXTP12N65X2M | IXYS | MOSFET N-CH TO-220 | 381 More on Order |
URL Link
www.oemstron.com/datasheet/IXTP12N65X2M
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Isolated Tab Package / Case TO-220-3 Full Pack, Isolated Tab |