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IXTL2X180N10T Datasheet

IXTL2X180N10T Cover
DatasheetIXTL2X180N10T
File Size113.96 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTL2X180N10T
Description MOSFET 2N-CH 100V 100A I5-PAK

IXTL2X180N10T - IXYS

IXTL2X180N10T Datasheet Page 1
IXTL2X180N10T Datasheet Page 2

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IXTL2X180N10T IXTL2X180N10T IXYS MOSFET 2N-CH 100V 100A I5-PAK 434

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URL Link

Manufacturer

IXYS

Series

Trench™

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A

Rds On (Max) @ Id, Vgs

7.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

151nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

Power - Max

150W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUSi5-Pak™

Supplier Device Package

ISOPLUSi5-Pak™