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IXTA80N12T2 Datasheet

IXTA80N12T2 Cover
DatasheetIXTA80N12T2
File Size197.94 KB
Total Pages6
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTA80N12T2
Description MOSFET N-CH 120V 80A TO-263

IXTA80N12T2 - IXYS

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IXTA80N12T2 IXTA80N12T2 IXYS MOSFET N-CH 120V 80A TO-263 118

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URL Link

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4740pF @ 25V

FET Feature

-

Power Dissipation (Max)

325W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB