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| Datasheet | IXTA180N10T7 |
| File Size | 197.66 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTA180N10T7 |
| Description | MOSFET N-CH 100V 180A TO-263-7 |
IXTA180N10T7 - IXYS
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IXTA180N10T7 | IXYS | MOSFET N-CH 100V 180A TO-263-7 | 178 More on Order |
URL Link
www.oemstron.com/datasheet/IXTA180N10T7
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Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V FET Feature - Power Dissipation (Max) 480W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 (IXTA..7) Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |