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IXFX260N17T Datasheet

IXFX260N17T Cover
DatasheetIXFX260N17T
File Size122.75 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXFX260N17T, IXFK260N17T
Description MOSFET N-CH 170V 260A PLUS247, MOSFET N-CH 170V 260A TO-264

IXFX260N17T - IXYS

IXFX260N17T Datasheet Page 1
IXFX260N17T Datasheet Page 2
IXFX260N17T Datasheet Page 3
IXFX260N17T Datasheet Page 4
IXFX260N17T Datasheet Page 5

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URL Link

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

170V

Current - Continuous Drain (Id) @ 25°C

260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

400nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1670W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

170V

Current - Continuous Drain (Id) @ 25°C

260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

400nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1670W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA