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IXFR38N80Q2 Datasheet

IXFR38N80Q2 Cover
DatasheetIXFR38N80Q2
File Size568.76 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFR38N80Q2
Description MOSFET N-CH 800V 28A ISOPLUS247

IXFR38N80Q2 - IXYS

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IXFR38N80Q2 IXFR38N80Q2 IXYS MOSFET N-CH 800V 28A ISOPLUS247 429

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8340pF @ 25V

FET Feature

-

Power Dissipation (Max)

416W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™