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IXFR32N100Q3 Datasheet

IXFR32N100Q3 Cover
DatasheetIXFR32N100Q3
File Size142.33 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFR32N100Q3
Description MOSFET N-CH 1000V 23A ISOPLUS247

IXFR32N100Q3 - IXYS

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IXFR32N100Q3 IXFR32N100Q3 IXYS MOSFET N-CH 1000V 23A ISOPLUS247 549

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9940pF @ 25V

FET Feature

-

Power Dissipation (Max)

570W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

TO-247-3