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| Datasheet | IXFN32N100Q3 |
| File Size | 124.76 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN32N100Q3 |
| Description | MOSFET N-CH 1000V 28A SOT-227 |
IXFN32N100Q3 - IXYS
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IXFN32N100Q3 | IXYS | MOSFET N-CH 1000V 28A SOT-227 | 496 More on Order |
URL Link
www.oemstron.com/datasheet/IXFN32N100Q3
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9940pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |