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IXFN20N120 Datasheet

IXFN20N120 Cover
DatasheetIXFN20N120
File Size566.68 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN20N120
Description MOSFET N-CH 1200V 20A SOT-227B

IXFN20N120 - IXYS

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URL Link

IXFN20N120

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC