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IXFN200N10P Datasheet

IXFN200N10P Cover
DatasheetIXFN200N10P
File Size166.48 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN200N10P
Description MOSFET N-CH 100V 200A SOT-227B

IXFN200N10P - IXYS

IXFN200N10P Datasheet Page 1
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IXFN200N10P IXFN200N10P IXYS MOSFET N-CH 100V 200A SOT-227B 347

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URL Link

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

235nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 25V

FET Feature

-

Power Dissipation (Max)

680W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC