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IXFK20N120 Datasheet

IXFK20N120 Cover
DatasheetIXFK20N120
File Size568.96 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXFK20N120, IXFX20N120
Description MOSFET N-CH 1200V 20A TO-264, MOSFET N-CH 1200V 20A ISOPLUS247

IXFK20N120 - IXYS

IXFK20N120 Datasheet Page 1
IXFK20N120 Datasheet Page 2
IXFK20N120 Datasheet Page 3
IXFK20N120 Datasheet Page 4

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URL Link

IXFK20N120

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

IXFX20N120

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3