Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IXFJ32N50Q Datasheet

IXFJ32N50Q Cover
DatasheetIXFJ32N50Q
File Size90.21 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFJ32N50Q
Description MOSFET N-CH 500V 32A TO-220

IXFJ32N50Q - IXYS

IXFJ32N50Q Datasheet Page 1
IXFJ32N50Q Datasheet Page 2
IXFJ32N50Q Datasheet Page 3
IXFJ32N50Q Datasheet Page 4

The Products You May Be Interested In

IXFJ32N50Q IXFJ32N50Q IXYS MOSFET N-CH 500V 32A TO-220 379

More on Order

URL Link

IXFJ32N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

153nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3950pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-268

Package / Case

TO-220-3, Short Tab